Samsung has introduced a powerful 64 GB embedded multimedia card NAND flash memory, a dual core application processor and the first LPDDR3 DRAM using the 30 nm process technology.

The flash memory is capable of storing about 16,000 songs, with write speeds of 40 MB per second and read speed of 80 MB per second, both sequentially. This is three times faster than the fastest memory card available in the market.

20 nm technology is made use of in the card, which has a DDR 2.0 interface. It is 60% more superior to the 30 nm 32 GB card it released in January 2010.

The dual core ARM Cortex A9 processor, Exynos 4212, ensures 30 % reduction in power consumption. The processor chip is capable of giving 1080p high definition resolution graphics. The Graphics Processing Units provide much better 3D graphics performance than the earlier processors of Samsung.

The customers can get the Exynos 4212 by early next year.

The 4 GB LPDDR3 DRAM with 30 nm process technology can transfer data at the rate of 1600 Mbits per second, which is 50% more than the LPDDR2 chips in the market. The power consumption is less by 20%.

All these products are needed for smartphones and tablets, which need fast up gradation, being the most attractive of all the modern products.